Study of Effective Graded Oxide Capacitance and Length Variation on Analog, RF and Power Performances of Dual Gate Underlap MOS-HEMT

Comparative analysis of a Symmetric Heterojunction Underlap Double Gate (U-DG) GaN/AlGaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) on varying the effective capacitance by using different oxide materials source and drain sides, determination optimum length oxides for superior device performance has been presented in this work. This paper shows detailed Analog Figure Merits (FoMs) like variation Drain Current (IDS), Transconductance (gm), Output Resistance (R0), Intrinsic Gain (gmR0), RF FoMs cut-off frequency (fT), maximum oscillation (fMAX), gate to resistance (RGS), (RGD), capacitance(CGD), (CGS) total (CGG) Non-Quasi-Static (NQS) approach. Power includes power (Pout), dBm output efficiency (POE) have studied. Studies reveal that with higher dielectric material towards side performance. On subsequently changing proportion two layer length, it is observed as increases demonstrates more desirable characteristics while best obtained from equal lengths HfO2 SiO2.